IKW25N120T2-buy original Infineon electronic components

IKW25N120T2-buy original Infineon electronic components

Description

IKW25N120T2 is a high-performance component designed and produced by Infineon, an igbt transistor dedicated to the automotive field. This device is dedicated to the field of automobile manufacturing, so it is an electronic component commonly used by automobile manufacturers. xt-shenzhen is a supplier with sufficient supply and sufficient inventory, and is your trusted partner! ! !

The IKW25N120T2 is a three-terminal power semiconductor device developed using TRENCHSTOP™ IGBT technology, known for its high efficiency and fast switching. IGBTs combine isolated gate FETs for control inputs and bipolar power transistors for switches in a single device. And combines the best balance between turn-on and turn-off energy with excellent robustness and excellent EMI behavior.IGBTs combine the simple gate drive characteristics of a MOSFET with the high current and low saturation voltage capabilities of a bipolar transistor by combining an isolated gate FET for the control input and a bipolar power transistor for the switch in a single device together.

● Devices with integrated high-speed, fast-recovery anti-parallel diodes.
● Collector-emitter voltage range 1100 to 1600V
● Very low VCEsat
● Low turn-off losses
● Short tail current
● Low EMI
● Maximum junction temperature 175°C

rated power349 W
Number of pins3
Forward Voltage1.65 V
Dissipated power349 W
Breakdown Voltage (Collector-Emitter)1200 V
reverse recovery time195 ns
Rated power (Max)349 W
Operating temperature-40℃ ~ 175℃ (TJ)
Dissipated power (Max)349 W
Installation methodThrough Hole
packageTO-247-3
PackingTube
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