FGL40N120ANDTU-ON Semiconductor Component
FGL40N120ANDTU is designed and developed by ON Semiconductor. This model is a car-grade chip specially designed to handle automotive applications. Due to their wide application range and high quality requirements, this often results in incomplete production capacity. The market has always been in a state of short supply. If you want to buy or learn more about the shortage of electronic components, please contact xt-shenzhen for your answer! ! !
The FGL40N120ANDTU Insulated Gate Bipolar IGBT Transistor is a three-terminal power semiconductor device known for its high efficiency and fast switching. IGBTs combine the simple gate drive characteristics of a MOSFET with the high current and low saturation voltage capabilities of a bipolar transistor by combining an isolated gate FET for the control input and a bipolar power transistor for the switch in a single device together.
• High-speed switching
• Low Saturation Voltage: VCE(sat) = 2.6 V @ IC = 40A
• High input impedance
• CO-PAK, IGBT with FRD: trr = 75ns (typ)
• Applications for induction heating, UPS, AC and DC motor control and general purpose inverters
• The pulse width is limited by the maximum value.
|Dissipated power||500000 mW|
|Breakdown Voltage (Collector-Emitter)||1200V|
|reverse recovery time||112ns|
|Rated power (Max)||500W|
|Operating temperature||-55℃ ~ 150℃ (TJ)|
|Dissipated power (Max)||500000 mW|
|Installation method||Through Hole|
|Number of pins||3|