The IKW50N60T is an IGBT type semiconductor device designed and developed by Infineon.They can be used in many applications where hard and soft handoffs may be required. This includes industrial drives, UPS, inverters, home appliances and induction cooking. Due to the wide range of applications, such devices are in high demand in the market. Infineon full range of original electronic components, welcome to call xt-shenzhen!
IKW50N60T is a three-terminal power semiconductor device with high efficiency and high switching speed. The device combines the simple gate drive of a MOSFET with the high current, low saturation voltage performance of a bipolar transistor, integrating an isolated gate FET and a switching bipolar power transistor in a single device.
The IKW50N60T integrates a high-speed fast recovery device with anti-parallel diodes. These advantages enable the equipment to effectively share the working pressure of the equipment, thereby ensuring the safe and efficient operation of the system.
●The collector-emitter voltage range is 600 to 650V
●Very low VCEsat
●Low turn-off loss
●Short tail current
●Maximum junction temperature 175°C
Collector-emitter with voltage rating of 600 to 650V
●Compliant with TrenchStop™ technology
|-40℃ ~ 175℃||-40℃ ~ 175℃|
|Through Hole||Through Hole|