IHW15N120R3-Original Infineon

IHW15N120R3-Original Infineon


IHW15N120R3 is an igbt transistor specially developed by Infineon for use in the automotive field, and it is a high-performance component in this field. The device has been in short supply in the automotive sector and is therefore a popular electronic component for automakers. xt-shenzhen is a supplier with sufficient supply and sufficient inventory, and is your trusted partner! ! !

IHW15N120R3 IGBT transistor with collector-emitter voltage rating of 1100 to 1600V with TrenchStop™ technology. The family includes devices with integrated high-speed, fast-recovery anti-parallel diodes. IGBTs combine the simple gate drive characteristics of a MOSFET with the high current and low saturation voltage capabilities of a bipolar transistor by combining an isolated gate FET for the control input and a bipolar power transistor for the switch in a single device together.

• Robust monolithic body diode with low forward voltage, designed for soft commutation
• TRENCHSTOPTM technology application provides:
– very strict parametric distribution
– High durability, temperature stable behavior
– Low VCEsat – Easy parallel switching capability due to positive temperature coefficient in VCEsat
• Low EMI
• JESD-022 Compliant Target Application
• Lead-free lead plating; RoHS compliant
• Inductive cooking
• Inverter microwave oven
• Resonant converter
• GCEGCE key performance for soft switching applications
• Low turn-off losses
• Short tail current
• Maximum junction temperature 175°C

rated power254W
Number of pins3
Dissipated power254W
Breakdown Voltage (Collector-Emitter)1200V
Rated power (Max)254W
Operating temperature-40℃ ~ 175℃
Dissipated power (Max)254W
Installation methodThrough Hole
RoHS standardRoHS Compliant
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