FF300R12KS4-Infineon IGBT modules

Description

FF300R12KS4 is an IGBT module device designed by Infineon, the world’s leading semiconductor company, with the characteristics of low switching loss. The device is designed and developed for a variety of industrial, commercial, construction and agricultural vehicles, and is a modular device with a very wide range of applications. xt-shenzhen company can supply all kinds of original IGBT modules, you are welcome to write to learn more about original electronic components.

The FF300R12KS4 device can be used for switching at frequencies up to 60 khz for both hard and soft switching applications. For example inverters, UPS and industrial drives. Combines the simple gate drive characteristics of a MOSFET with the high current and low saturation voltage capability of a bipolar transistor by combining an isolated gate FET for the control input and a bipolar power transistor for the switch in a single device . The Insulated Gate Bipolar Transistor, or IGBT, developed by Infineon, is a three-terminal power semiconductor device recognized by a wide range of manufacturers for its high efficiency and fast switching.

●Provide low switching loss
● Up to 60 khz frequency switching.
●With open collector transmitter voltage at 1200V
● Collector-emitter saturation voltage (Ic=300A, Vge=15V)
Gate threshold voltage (IC= 12,0 mA, VCE= VGE, Tvj= 25°C)
●Gate charge (Vge=-15V~+15V)
●Internal gate resistance (Tvj = 25°C)
●Input capacitance f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V
●Reverse transfer capacitance f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V
Collector-emitter cut-off current VCE= 1200 V, VGE= 0 V, Tvj= 25°C
Gate-Emitter Leakage Current VCE= 0 V, VGE= 20 V, Tvj= 25°C