FZ400R12KE3-Infineon IGBT 모듈

설명

FZ400R12KE3 is a low switching loss IGBT module device designed by the world’s leading semiconductor company Infineon. 이 장치는 다양한 산업 분야에 맞게 설계 및 개발되었습니다., 광고, construction and agricultural vehicles and is a modular device with a very wide range of applications. If you want to buy or learn more original electronic components from Infineon, xt-Shenzhen에 연락하여 서비스를 받으십시오..

그만큼 FZ400R12KE3 device can be used to switch at frequencies up to 60 khz for hard and soft switching applications. Such as inverters, UPS 및 산업용 드라이브. These devices form a single semi-integrated module by combining isolated gate FETs for control inputs and bipolar power transistors for switching in a single device. The insulated gate bipolar transistor or IGBT developed by Infineon is a three-terminal power semiconductor device recognized by many manufacturers for its high efficiency and fast switching.

● 콜렉터-이미터 포화 전압 (IC=300A, Vge=15V)
● Gate threshold voltage (IC= 12,0 엄마, VCE = VGE, 온도 = 25°C)
●게이트 차지 (Vge=-15V~+15V)
●내부 게이트 저항 (온도 = 25°C)
●입력 정전용량 f = 1 메가헤르츠, 온도 = 25°C, VCE= 25 V, VGE= 0 V
●역전송 용량 f = 1 메가헤르츠, 온도 = 25°C, VCE= 25 V, VGE= 0 V
● Collector-emitter cut-off current VCE= 1200 V, VGE= 0 V, 온도 = 25°C
● Gate-Emitter Leakage Current VCE= 0 V, VGE= 20 V, 온도 = 25°C