IKW50N60H3-순정 Infineon 전자 부품 구매
$2.53
- 설명
- 문의
설명
The IKW50N60H3 designed and developed by Infineon is an igbt transistor dedicated to the automotive field and a high-performance component produced with TrenchStop™ technology. This device plays a very important role in the automotive field and is therefore a commonly used electronic component by car manufacturers. You can rest assured to buy all kinds of automotive-related electronic components from xt-shenzhen, a supplier with sufficient supply and sufficient stock! ! !
그만큼 IKW50N60H3 Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device known for its high efficiency and fast switching. IGBTs combine the simple gate drive characteristics of a MOSFET with the high current and low saturation voltage capabilities of a bipolar transistor by combining an isolated gate FET for the control input and a bipolar power transistor for the switch in a single device together. Includes devices with integrated high-speed, fast-recovery anti-parallel diodes.
• Very low VCEsat
• Low EMI
• Very soft, fast recovery anti-parallel diode
• 175°C maximum junction temperature
• Standards Compliant JEDEC Compliant Target Application
• Lead-free lead plating; RoHS compliant
• Complete product range and PSpice
• ups
• Welding converter
• High switching frequency converter GCEGCE
정격 전력 | 333여 |
핀 수 | 3 |
소모된 전력 | 333여 |
Breakdown Voltage (Collector-Emitter) | 600V |
reverse recovery time | 130NS |
Rated power (최대) | 333여 |
작동 온도 | -40℃ ~ 175℃ |
설치 방법 | 구멍을 통해 |
패키지 | TO-247-3 |
포장 | 튜브 |