IPW60R070C6-오리지널 인피니언

IPW60R070C6-오리지널 인피니언

IPW60R070C6-오리지널 인피니언

$7.06

재고

$7.06

설명

IPW60R070C6 is a MOS transistor designed and developed by Infineon. Designed using the technology-first Super Junction (SJ) principle, its performance far exceeds other similar products. Because of its powerful functions, the market has been in a state of low supply and demand.If you want to know or buy more electronic components in short supply, 서비스를 제공하려면 xt-shenzhen에 문의하십시오.! ! !

그만큼 IPW60R070C6 uses high voltage power MOSFET technology and is designed according to the Super Junction (SJ) principle. The 650V CFD2 series combines leading SJ MOSFET experience with best-in-class innovation. The resulting device offers fast switching, combining all the advantages of an SJ MOSFET while providing an extremely fast and robust body diode.Extremely low switching, commutation and conduction losses combined with the highest robustness make especially resonant switching applications more reliable and efficient.Especially suitable for the automotive field, it is an automotive-grade electronic component.

●Lighter and smarter ultrafast body diode Very high commutation durability
Extremely low FOM, Rdson Qq and EOS lead to extremely low losses
●Easy to use/drive
●Pb-free plating, halogen-free molding compound
●Compliant with JEDEC (J-STD20 and JESD22) industrial grade application requirements
●AEC-Q101 automotive industry qualified MOSFET.
●Provides best-in-class performance for higher efficiency, power density and cost-effectiveness

채널 수1
극성N채널
소모된 전력391여 (Tc)
threshold voltage3V
Drain-Source Voltage (Vds)600V
Continuous Drain Current (Ids)53ㅏ
상승 시간12NS
Input Capacitance (Ciss)3800pF @100V(Vds)
Rated power (최대)391여
가을 시간5NS
작동 온도-55℃ ~ 150℃ (TJ)
소모된 전력 (최대)391여 (Tc)
핀 수3
패키지TO-247-3
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    SKU: 14200
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