NGTB25N120FL2WG -ON Halbleiterkomponente
$2.45
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Beschreibung
NGTB25N120FL2WG electronic component designed and developed by ON Semiconductor is an insulated gate bipolar transistor (IGBT). Momentan, the supply is in short supply in the market.You can rest assured to buy all kinds of electronic components in short supply from xt-shenzhen company. xt-shenzhen promises that all electronic components sold by our company are all original and genuine, high-quality products with guaranteed quality.
Das NGTB25N120FL2WG Insulated Gate Bipolar Transistor (IGBT) features a robust and cost-effective field stop trench structure. It also provides superior performance in demanding switching applications, providing low state voltage and minimal switching losses. Ideal for UPS and solar applications, the NGTB25N120FL2WG utilizes a soft and fast co-packaged freewheeling diode with low forward voltage.
• Extremely efficient groove and field stop technology
•TJmax = 175°C
• Soft fast reverse recovery diode
• Optimized for high-speed switching
• 10 ms short circuit capability
• These are typical applications for Pb-Free devices
•Solar inverters
• Uninterruptible Power Inverter Supply (UPS)
• Welding characteristics
| Verlustleistung | 385000 mW |
| Die Spannung unterbrechen (Kollektor-Emitter) | 1200 v |
| Reverse-Recovery-Zeit | 154 ns |
| Nennleistung (max) | 385 W |
| Betriebstemperatur | -55℃ ~ 175 ℃ (TJ) |
| Verlustleistung (max) | 385000 mW |
| Installationsmethode | Durchgangsloch |
| Anzahl der Stifte | 3 |
| Paket | TO-247-3 |
| Verpackung | Rohr |
