FGA6560WDF-ON Halbleiterkomponente

FGA6560WDF-ON Halbleiterkomponente

FGA6560WDF-ON Halbleiterkomponente

$2.58

Auf Lager

$2.58

Beschreibung

FGA6560WDF Insulated Gate Bipolar Transistor (IGBT) designed and developed by ON Semiconductor. Momentan, the supply is in short supply in the market.You can rest assured to buy all kinds of electronic components in short supply from xt-shenzhen company. xt-shenzhen promises that all electronic components sold by our company are all original and genuine, high-quality products with guaranteed quality.

Das FGA6560WDF is ON Semiconductor’s new family of third-generation field-stop IGBTs featuring novel field-stop IGBT technology to provide optimum performance for welder applications requiring low conduction and switching losses. These are essential for applications requiring low conduction and switching losses. This device has very good performance and is one of the important devices mainly promoted by ON Semiconductor. This device complies with all compliance standards, including RoHS.

• Power factor correction
• Welders and industrial applications
• Maximale Sperrschichttemperatur: TJ =175oC
• Positiver Temperaturkoeffizient für einfachen Parallelbetrieb
• Hohe Strombelastbarkeit
• Low saturation voltage: VCE(saß) =1.8 V(Typ.) @IC = 60 EIN
• 100% of components are ILM(1) tested
• Hohe Eingangsimpedanz
• Schnell umschalten
• RoHS Compliant

Verlustleistung306000 mW
Die Spannung unterbrechen (Kollektor-Emitter)650v
Reverse-Recovery-Zeit110ns
Nennleistung (max)306W
Betriebstemperatur-55℃ ~ 175 ℃
Verlustleistung (max)306000 mW
InstallationsmethodeDurchgangsloch
Anzahl der Stifte3
PaketTO-3-3
VerpackungRohr

    Artikelnummer: 23010
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