IKW25N120T2-Original Infineon

Beschreibung

The IKW25N120T2 designed and produced by Infineon is a high-performance component. This device is specially used in the automotive field and is one of the electronic components commonly used by automotive manufacturers. As a supplier with sufficient supply and sufficient stock, xt-shenzhen is your trusted partner! ! !

Das IKW25N120T2 ist ein dreipoliges Leistungshalbleiterbauelement, das unter Verwendung der TRENCHSTOP™ IGBT-Technologie entwickelt wurde, bekannt für seinen hohen Wirkungsgrad und schnelles Schalten. IGBTs combine isolated gate FETs for control inputs and bipolar power transistors for switching in a single device. And combines the best balance between turn-on and turn-off energy with excellent robustness and excellent EMI behavior.
IGBTs combine the simple gate drive characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors, combining isolated gate FETs for control inputs and bipolar power transistors for switching in one device.

● Geräte mit integriertem High-Speed, antiparallele Dioden mit schneller Erholung.
● Kollektor-Emitter-Spannungsbereich 1100 bis 1600 V
● Sehr niedriger VCEsat
● Geringe Abschaltverluste
● Kurzer Schweifstrom
● Niedrige EMI
● Maximale Sperrschichttemperatur 175 °C