FZ400R12KE3-Infineon-IGBT-Module

Beschreibung

FZ400R12KE3 is a low switching loss IGBT module device designed by the world’s leading semiconductor company Infineon. Das Gerät wurde für eine Vielzahl von Industrieanwendungen konzipiert und entwickelt, kommerziell, construction and agricultural vehicles and is a modular device with a very wide range of applications. If you want to buy or learn more original electronic components from Infineon, Bitte kontaktieren Sie xt-Shenzhen, um Sie zu bedienen.

Das FZ400R12KE3 device can be used to switch at frequencies up to 60 khz for hard and soft switching applications. Such as inverters, USV und Industrieantriebe. These devices form a single semi-integrated module by combining isolated gate FETs for control inputs and bipolar power transistors for switching in a single device. The insulated gate bipolar transistor or IGBT developed by Infineon is a three-terminal power semiconductor device recognized by many manufacturers for its high efficiency and fast switching.

● Kollektor-Emitter-Sättigungsspannung (Ic=300A, Vge=15V)
● Gate threshold voltage (IC= 12,0 mA, VCE = VGE, Temperatur = 25°C)
●Gate-Ladung (Vge=-15V~+15V)
●Interner Gate-Widerstand (Temperatur = 25°C)
●Eingangskapazität f = 1 MHz, Temperatur = 25°C, VCE= 25 v, VGE= 0 v
●Rückübertragungskapazität f = 1 MHz, Temperatur = 25°C, VCE= 25 v, VGE= 0 v
● Collector-emitter cut-off current VCE= 1200 v, VGE= 0 v, Temperatur = 25°C
● Gate-Emitter Leakage Current VCE= 0 v, VGE= 20 v, Temperatur = 25°C