IKW50N60DTP-Original Infineon
$3.10
- Beschreibung
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Beschreibung
IKW50N60DTP is an igbt transistor specially used in the automotive field, which is a high-performance component produced by Infineon. The device has been in short supply in the automotive field, so it is a common electronic component for car manufacturers. xt-shenzhen ist ein Lieferant mit ausreichender Versorgung und ausreichendem Lagerbestand, und ist Ihr zuverlässiger Partner! ! !
Developed with TRENCHSTOP™ IGBT technology, the IKW50N60DTP is a three-terminal power semiconductor device known for its high efficiency and fast switching. IGBTs kombinieren FETs mit isoliertem Gate für Steuereingänge und bipolare Leistungstransistoren für Schalter in einem einzigen Gerät. And combines the best balance between turn-on and turn-off energy with excellent robustness and excellent EMI behavior, including devices with integrated high-speed, antiparallele Dioden mit schneller Erholung.
• Very low VCEsat• Low turn-off losses
• Short tail current
• Low EMI
• Very soft, fast recovery anti-parallel diode
• 175°C maximum junction temperature
• JEDEC compliant for target application
• Lead-free lead plating; RoHS compliant
• Solar inverters
• ups
• Medium switching frequency converter GCEGCE key performance
| Anzahl der Stifte | 3 |
| Verlustleistung | 319.2 W |
| Die Spannung unterbrechen (Kollektor-Emitter) | 600 v |
| Reverse-Recovery-Zeit | 115 ns |
| Nennleistung (max) | 319.2 W |
| Betriebstemperatur | -40℃ ~ 175 ℃ (TJ) |
| Verlustleistung (max) | 333000 mW |
| Paket | TO-247-3 |
| Verpackung | Rohr |
| RoHS-Standard | RoHS-konform |
