NCV8402ASTT1G-安森美半导体
$0.35
- 描述
- 询问
描述
As a supplier of electronic components with sufficient supply, xt-shenzhen can supply customers with NCV8402ASTT1G components that are in short supply. The device is a MOS tube designed and developed by the well-known semiconductor company ON Semiconductor, and has been widely recognized in terms of quality and performance. If you need to understand and purchase various electronic components that are in short supply, xt-shenzhen是您不错的选择! ! !
这 NCV8402ASTT1G is RoHS compliant for typical applications, and is a three-terminal protected low-side smart discrete device. Protection features include overcurrent, overtemperature, 静电放电, and integrated drain-to-gate clamps for overvoltage protection. Features self-protection configurations including current limiting, temperature limiting, and ESD (electrostatic discharge) protection. The strong protection features provided by the device make the device well suited for harsh automotive environments.
•Short circuit protection
• Thermal Shutdown with Auto-Restart
• Overvoltage protection
• Integrated clamp for inductive switching
• ESD protection
• NCV8402AMNWT1G − wettable side product
• dV/dt robustness
• Analog drive capability (logic level input)
• NCV prefix for automotive and other applications requiring unique site and control change requirements; AEC−Q100 qualified and PPAP capable
•Switches a wide variety of resistive, inductive, and capacitive loads
• Can replace electromechanical relays and discrete circuits
•auto industry
无卤状态 | 无卤素 |
输出端口数 | 1 |
输出电流 | 5.4一个 |
通道数 | 2 |
引脚数 | 4 |
漏源电阻 | 0.165哦 |
极性 | N沟道 |
耗散功率 | 1.1W |
阈值电压 | 1.8五 |
漏源电压 (电压) | 42五 |
漏源击穿电压 | 55五 |
连续漏极电流 (识别号) | 2一个 |
输出电流(最大限度) | 2一个 |
输入数量 | 1 |
工作温度 | -40℃~150℃ (TJ) |
耗散功率(最大限度) | 1620 兆瓦 |
安装方法 | 表面贴装 |
封装 | TO-261-4 |
包装 | 胶带 & 卷轴 (TR) |
制造应用 | Switch a Variety of Resistive, Inductive and Capacitive Loads, Can Replace Electromechanical Relays and Discrete Circuits, 汽车 / 工业的 |