NCV8402ASTT1G-安森美半导体

NCV8402ASTT1G-安森美半导体

NCV8402ASTT1G-安森美半导体

$0.35

有存货

$0.35

描述

As a supplier of electronic components with sufficient supply, xt-shenzhen can supply customers with NCV8402ASTT1G components that are in short supply. The device is a MOS tube designed and developed by the well-known semiconductor company ON Semiconductor, and has been widely recognized in terms of quality and performance. If you need to understand and purchase various electronic components that are in short supply, xt-shenzhen是您不错的选择! ! !

NCV8402ASTT1G is RoHS compliant for typical applications, and is a three-terminal protected low-side smart discrete device. Protection features include overcurrent, overtemperature, 静电放电, and integrated drain-to-gate clamps for overvoltage protection. Features self-protection configurations including current limiting, temperature limiting, and ESD (electrostatic discharge) protection. The strong protection features provided by the device make the device well suited for harsh automotive environments.

•Short circuit protection
• Thermal Shutdown with Auto-Restart
• Overvoltage protection
• Integrated clamp for inductive switching
• ESD protection
• NCV8402AMNWT1G − wettable side product
• dV/dt robustness
• Analog drive capability (logic level input)
• NCV prefix for automotive and other applications requiring unique site and control change requirements; AEC−Q100 qualified and PPAP capable
•Switches a wide variety of resistive, inductive, and capacitive loads
• Can replace electromechanical relays and discrete circuits
•auto industry

无卤状态无卤素
输出端口数1
输出电流5.4一个
通道数2
引脚数4
漏源电阻0.165哦
极性N沟道
耗散功率1.1W
阈值电压1.8五
漏源电压 (电压)42五
漏源击穿电压55五
连续漏极电流 (识别号)2一个
输出电流(最大限度)2一个
输入数量1
工作温度-40℃~150℃ (TJ)
耗散功率(最大限度)1620 兆瓦
安装方法表面贴装
封装TO-261-4
包装胶带 & 卷轴 (TR)
制造应用Switch a Variety of Resistive, Inductive and Capacitive Loads, Can Replace Electromechanical Relays and Discrete Circuits, 汽车 / 工业的

    存货单位: 43000
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