MBR0520LT1G-安森美半导体

MBR0520LT1G-安森美半导体

MBR0520LT1G-安森美半导体

$0.44

有存货

$0.44

描述

As a professional supplier of electronic components, xt-shenzhen can provide MBR0520LT1G devices to global customers. The device was designed and developed by ON Semiconductor, a world-leading semiconductor company, and is a high-performance Schottky diode. 凭借多年的积累, xt-shenzhen can efficiently complete the procurement plan of various electronic components in short supply for customers! ! !

MBR0520LT1G Schottky power rectifier is a device using Schottky barrier principle and barrier metal. Can produce the best forward voltage drop and reverse current. It is very suitable for low-voltage, high-frequency rectification circuits. Using compact size packaging technology, it is used as a freewheeling and polarity protection diode during system operation.

•Rate rectification, freewheeling and polarity protection applications.
•Epoxy mold
•Automotive grade AEC-Q101 standard
•stress protection ring
•Maximum repetitive reverse voltage Vrrm 20V
•5.5A IFSM non-repetitive forward surge current
•(AV)Forward current IF: 0.5一个
•Operating junction temperature range: -65°C to 125°C
•0.385V maximum forward voltage VF 0.5A
• Package designed for optimal automated board assembly
• Very low forward voltage (0.38 V max @ 0.5 一个, 25°C)

Rated voltage (直流)20.0五
rated current500 嘛
输出电流≤500mA
引脚数2
Forward Voltage0.385五
极性Standard
thermal resistance150℃/瓦 (RθJL)
forward current500 嘛
Maximum Forward Surge Current (Ifsm)5.5一个
Forward voltage (最大限度)385毫伏
Forward current (最大限度)500 嘛
工作温度-65°C ~ 125°C
安装方法表面贴装
封装SOD-123
包装胶带 & 卷轴 (TR)
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