IKW25N120T2-原装英飞凌
$3.35
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描述
The IKW25N120T2 designed and produced by Infineon is a high-performance component. This device is specially used in the automotive field and is one of the electronic components commonly used by automotive manufacturers. As a supplier with sufficient supply and sufficient stock, xt-shenzhen is your trusted partner! ! !
这 IKW25N120T2 is a three-terminal power semiconductor device developed using TRENCHSTOP™ IGBT technology, known for its high efficiency and fast switching. IGBTs combine isolated gate FETs for control inputs and bipolar power transistors for switching in a single device. And combines the best balance between turn-on and turn-off energy with excellent robustness and excellent EMI behavior.
IGBTs combine the simple gate drive characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors, combining isolated gate FETs for control inputs and bipolar power transistors for switching in one device.
● Devices with integrated high-speed, fast-recovery anti-parallel diodes.
● Collector-emitter voltage range 1100 to 1600V
● Very low VCEsat
● Low turn-off losses
● Short tail current
● Low EMI
● Maximum junction temperature 175°C
额定功率 | 349 W |
引脚数 | 3 |
Forward Voltage | 1.65 五 |
耗散功率 | 349 W |
击穿电压 (集电极-发射极) | 1200 五 |
反向恢复时间 | 195 ns |
额定功率 (最大限度) | 349 W |
工作温度 | -40℃~175℃ (TJ) |
耗散功率 (最大限度) | 349 W |
安装方式 | 通孔 |
包裹 | TO-247-3 |
包装 | 管子 |