IKW50N60H3-compre componentes eletrônicos originais da Infineon
$2.53
- Descrição
- Investigação
Descrição
The IKW50N60H3 designed and developed by Infineon is an igbt transistor dedicated to the automotive field and a high-performance component produced with TrenchStop™ technology. This device plays a very important role in the automotive field and is therefore a commonly used electronic component by car manufacturers. You can rest assured to buy all kinds of automotive-related electronic components from xt-shenzhen, a supplier with sufficient supply and sufficient stock! ! !
o IKW50N60H3 Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device known for its high efficiency and fast switching. IGBTs combine the simple gate drive characteristics of a MOSFET with the high current and low saturation voltage capabilities of a bipolar transistor by combining an isolated gate FET for the control input and a bipolar power transistor for the switch in a single device together. Includes devices with integrated high-speed, diodos antiparalelos de recuperação rápida.
• Very low VCEsat
• Baixa EMI
• Muito macio, diodo antiparalelo de recuperação rápida
• Temperatura máxima de junção de 175°C
• Standards Compliant JEDEC Compliant Target Application
• Chapeamento de chumbo sem chumbo; Compatível com RoHS
• Complete product range and PSpice
• ups
• Welding converter
• High switching frequency converter GCEGCE
| rated power | 333C |
| Número de pinos | 3 |
| Poder dissipado | 333C |
| Queda de tensão (Coletor-Emissor) | 600V |
| tempo de recuperação reversa | 130ns |
| Potência nominal (Máx.) | 333C |
| Temperatura de operação | -40℃ ~ 175 ℃ |
| Método de instalação | Through Hole |
| pacote | PARA-247-3 |
| Embalagem | Tubo |
