IHW15N120R3-Original Infineon
$2.18
- Descrição
- Investigação
Descrição
IHW15N120R3 is an igbt transistor specially developed by Infineon for use in the automotive field, and it is a high-performance component in this field. The device has been in short supply in the automotive sector and is therefore a popular electronic component for automakers. xt-shenzhen é um fornecedor com oferta e estoque suficientes, e é seu parceiro de confiança! ! !
IHW15N120R3 IGBT transistor with collector-emitter voltage rating of 1100 to 1600V with TrenchStop™ technology. The family includes devices with integrated high-speed, diodos antiparalelos de recuperação rápida. IGBTs combine the simple gate drive characteristics of a MOSFET with the high current and low saturation voltage capabilities of a bipolar transistor by combining an isolated gate FET for the control input and a bipolar power transistor for the switch in a single device together.
• Robust monolithic body diode with low forward voltage, designed for soft commutation
• TRENCHSTOPTM technology application provides:
– very strict parametric distribution
– High durability, temperature stable behavior
– Low VCEsat – Easy parallel switching capability due to positive temperature coefficient in VCEsat
• Baixa EMI
• JESD-022 Compliant Target Application
• Chapeamento de chumbo sem chumbo; Compatível com RoHS
• Inductive cooking
• Inverter microwave oven
• Resonant converter
• GCEGCE key performance for soft switching applications
• Low turn-off losses
• Corrente de cauda curta
• Maximum junction temperature 175°C
| potência nominal | 254C |
| Número de pinos | 3 |
| Poder dissipado | 254C |
| Queda de tensão (Coletor-Emissor) | 1200V |
| Potência nominal (Máx.) | 254C |
| Temperatura de operação | -40℃ ~ 175 ℃ |
| Poder dissipado (Máx.) | 254C |
| Método de instalação | Through Hole |
| pacote | PARA-247-3 |
| Embalagem | Tubo |
| Padrão RoHS | Compatível com RoHS |
