FGH60N60SMD -ON Semiconductor Component
$4.10
- Descrição
- Investigação
Descrição
FGH60N60SMD is launched by ON Semiconductor, the world’s top IGBT transistor research and development company. The transistor is at the industry-leading level in both quality and performance. If you want to buy or learn more about ON Semiconductor’s high-end electronic components, entre em contato com xt-shenzhen para atendê-lo. xt-shenzhen is a company specializing in selling all kinds of original electronic components, you can buy with confidence! ! !
o FGH60N60SMD utilizes novel field stop IGBT technology to provide optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications. An IGBT transistor is a three-terminal power semiconductor device that combines the simple gate drive characteristics of a MOSFET with bipolarity by combining an isolated gate FET for the control input and a bipolar power transistor for the switch in a single device. The transistor’s high current and low saturation voltage capabilities combine.
• Maximum Junction Temperature: TJ = 175oC
• Positive temperature coefficient for easy parallel operation
• High current capability
• Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 60 UMA
• High input impedance
• Quick switch: EOFF = 7.5 uJ/A
• Enhanced parametric distribution
• RoHS compliant applications
| Número de pinos | 3 |
| Poder dissipado | 600 C |
| Queda de tensão (Coletor-Emissor) | 600 V |
| tempo de recuperação reversa | 39 ns |
| Potência nominal (Máx.) | 600 C |
| Temperatura de operação | -55℃ ~ 175 ℃ (TJ) |
| Poder dissipado (Máx.) | 600 C |
| Método de instalação | Through Hole |
| pacote | PARA-247-3 |
| Embalagem | Tubo |
