IKW40N120H3-购买原装英飞凌电子元件

描述

IKW40N120H3 is an IGBT transistor electronic component designed and developed by Infineon using TrenchStop™ technology. It is a high-tech product, mainly used in industrial control, communication equipment, 医疗器材, military electronic equipment, ETC. Widespread use makes this device in short supply in the market. If you want to buy or learn about Infineon’s full range of original products, 请联系xt-shenzhen为您服务! ! !

这 IKW40N120H3 is a class of discrete devices and modules, the insulated gate bipolar transistor or IGBT is a three-terminal power semiconductor device known for its high efficiency and fast switching. IGBTs combine the simple gate drive characteristics of a MOSFET with the high current and low saturation voltage capabilities of a bipolar transistor by combining an isolated gate FET for the control input and a bipolar power transistor for the switching in one device. The IKW40N120H is a device that integrates a high-speed, fast-recovery anti-parallel diode. These advantages enable the equipment to share the equipment pressure and make the system operate more safely and efficiently.

●Collector-emitter voltage range 1100 to 1600V
●Very low VCEsat
●Low turn-off loss
●Short tail current
●Low EMI
●Maximum junction temperature 175°C
Collector-emitter with voltage rating of 1100 to 1600V
●Compliant with TrenchStop™ technology