БТИЗ-модули FZ400R12KE3-Infineon

Описание

FZ400R12KE3 is a low switching loss IGBT module device designed by the world’s leading semiconductor company Infineon. The device is designed and developed for a variety of industrial, commercial, construction and agricultural vehicles and is a modular device with a very wide range of applications. If you want to buy or learn more original electronic components from Infineon, please contact xt-Shenzhen to serve you.

The FZ400R12KE3 device can be used to switch at frequencies up to 60 khz for hard and soft switching applications. Such as inverters, UPS and industrial drives. These devices form a single semi-integrated module by combining isolated gate FETs for control inputs and bipolar power transistors for switching in a single device. The insulated gate bipolar transistor or IGBT developed by Infineon is a three-terminal power semiconductor device recognized by many manufacturers for its high efficiency and fast switching.

● Collector-emitter saturation voltage (Ic=300A, Vge=15V)
● Gate threshold voltage (IC= 12,0 мА, VCE= VGE, Tvj= 25°C)
●Gate charge (Vge=-15V~+15V)
●Internal gate resistance (Tvj = 25°C)
●Input capacitance f = 1 МГц, Tvj= 25°C, VCE= 25 В, VGE= 0 В
●Reverse transfer capacitance f = 1 МГц, Tvj= 25°C, VCE= 25 В, VGE= 0 В
● Collector-emitter cut-off current VCE= 1200 В, VGE= 0 В, Tvj= 25°C
● Gate-Emitter Leakage Current VCE= 0 В, VGE= 20 В, Tvj= 25°C