IKW50N60H3-купить оригинальные электронные компоненты Infineon

IKW50N60H3-купить оригинальные электронные компоненты Infineon

IKW50N60H3-купить оригинальные электронные компоненты Infineon

$2.53

В наличии

$2.53

Описание

The IKW50N60H3 designed and developed by Infineon is an igbt transistor dedicated to the automotive field and a high-performance component produced with TrenchStop™ technology. This device plays a very important role in the automotive field and is therefore a commonly used electronic component by car manufacturers. You can rest assured to buy all kinds of automotive-related electronic components from xt-shenzhen, a supplier with sufficient supply and sufficient stock! ! !

The IKW50N60H3 Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device known for its high efficiency and fast switching. IGBTs combine the simple gate drive characteristics of a MOSFET with the high current and low saturation voltage capabilities of a bipolar transistor by combining an isolated gate FET for the control input and a bipolar power transistor for the switch in a single device together. Includes devices with integrated high-speed, fast-recovery anti-parallel diodes.

• Very low VCEsat
• Low EMI
• Very soft, fast recovery anti-parallel diode
• 175°C maximum junction temperature
• Standards Compliant JEDEC Compliant Target Application
• Lead-free lead plating; RoHS compliant
• Complete product range and PSpice
• ups
• Welding converter
• High switching frequency converter GCEGCE

rated power333W
Количество контактов3
Рассеиваемая мощность333W
Breakdown Voltage (Collector-Emitter)600В
reverse recovery time130ns
Rated power (Макс)333W
Рабочая Температура-40℃ ~ 175℃
Способ установкиThrough Hole
упаковкаTO-247-3
УпаковкаТрубка

 

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