IKW50N60H3-acquista componenti elettronici Infineon originali
$2.53
- Descrizione
- Inchiesta
Descrizione
The IKW50N60H3 designed and developed by Infineon is an igbt transistor dedicated to the automotive field and a high-performance component produced with TrenchStop™ technology. This device plays a very important role in the automotive field and is therefore a commonly used electronic component by car manufacturers. You can rest assured to buy all kinds of automotive-related electronic components from xt-shenzhen, a supplier with sufficient supply and sufficient stock! ! !
IL IKW50N60H3 Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device known for its high efficiency and fast switching. Gli IGBT combinano le semplici caratteristiche di gate drive di un MOSFET con le capacità di corrente elevata e bassa tensione di saturazione di un transistor bipolare combinando insieme un FET con gate isolato per l'ingresso di controllo e un transistor di potenza bipolare per l'interruttore in un unico dispositivo. Includes devices with integrated high-speed, fast-recovery anti-parallel diodes.
• Very low VCEsat
• Low EMI
• Very soft, fast recovery anti-parallel diode
• 175°C maximum junction temperature
• Standards Compliant JEDEC Compliant Target Application
• Lead-free lead plating; RoHS compliant
• Complete product range and PSpice
• ups
• Welding converter
• High switching frequency converter GCEGCE
| rated power | 333W |
| Numero di pin | 3 |
| Potenza dissipata | 333W |
| Calo di tensione (Collettore-Emettitore) | 600v |
| tempo di recupero inverso | 130n.s |
| Potenza nominale (Massimo) | 333W |
| Temperatura di esercizio | -40℃ ~ 175℃ |
| Metodo di installazione | Foro passante |
| pacchetto | TO-247-3 |
| Imballaggio | Tubo |
