FF400R06KE3-Infineon-Originalkomponenten

Beschreibung

Designed and developed by the world’s leading technology company Infineon Semiconductor, the FF400R06KE3 device is not only guaranteed in quality, but also has top performance in its class. The characteristics of the device’s wide range of applications make it one of the best-selling IGBT modules on the market. xt-shenzhen promises to only provide you with a variety of original IGBT modules. For more product information, bitte kontaktieren Sie uns.

Das FF400R06KE3 device is a three-terminal power semiconductor device used in various industrial, kommerziell, construction and agricultural vehicle designs and is recognized by many manufacturers for its high efficiency and fast switching. The device forms a single semi-integrated module by combining isolated gate FETs for control inputs and bipolar power transistors. Installation and replacement are very convenient, greatly improving the efficiency of use.

●Gate threshold voltage (IC= 6.40 mA, VCE = VGE, Temperatur = 25°C)
●Gate charging (Vge=-15V~+15V)
●Interner Gate-Widerstand (Temperatur = 25°C)
●Eingangskapazität f = 1 MHz, Temperatur = 25°C, VCE= 25 v, VGE= 0 v
●Rückübertragungskapazität f = 1 MHz, Temperatur = 25°C, VCE= 25 v, VGE= 0 v
●Collector-emitter cut-off current VCE=600V, VGE= 0 v, Temperatur = 25°C
●Gate-Emitter Leakage Current VCE= 0 v, VGE= 20 v, Temperatur = 25°C