IHW15N120R3- الأصلي إنفينيون

وصف

IHW15N120R3 is an igbt transistor specially developed by Infineon for use in the automotive field, and it is a high-performance component in this field. The device has been in short supply in the automotive sector and is therefore a popular electronic component for automakers. xt-shenzhen is a supplier with sufficient supply and sufficient inventory, and is your trusted partner! ! !

IHW15N120R3 IGBT transistor with collector-emitter voltage rating of 1100 to 1600V with TrenchStop™ technology. The family includes devices with integrated high-speed, fast-recovery anti-parallel diodes. تجمع IGBTs بين خصائص محرك البوابة البسيطة لـ MOSFET مع إمكانات جهد التيار العالي والمنخفض للتشبع للترانزستور ثنائي القطب من خلال الجمع بين بوابة معزولة FET لمدخل التحكم وترانزستور طاقة ثنائي القطب للمفتاح في جهاز واحد معًا.

• Robust monolithic body diode with low forward voltage, designed for soft commutation
• TRENCHSTOPTM technology application provides:
– very strict parametric distribution
– High durability, temperature stable behavior
– Low VCEsat – Easy parallel switching capability due to positive temperature coefficient in VCEsat
• Low EMI
• JESD-022 Compliant Target Application
• Lead-free lead plating; RoHS compliant
• Inductive cooking
• Inverter microwave oven
• Resonant converter
• GCEGCE key performance for soft switching applications
• Low turn-off losses
• Short tail current
• Maximum junction temperature 175°C