MBR0530T1G 安森美半导体芯片

MBR0530T1G 安森美半导体芯片

MBR0530T1G 安森美半导体芯片

$0.40

有存货

$0.40

描述

MBR0530T1G device is a Schottky rectifier product from ON Semiconductor. The device is suitable for applications with sensitive requirements on voltage and rectification frequency. Its market demand has always been high and it is very popular in the market! XT-ShenZhen provides MBR0530T1G Schottky rectifier from the original factory. We are a professional supplier trusted by many well-known brands, 请放心购买!

The MBR0530T1G device uses the Schottky barrier principle. It uses a large area metal-silicon power diode. The device utilizes the compact size and weight that are critical to the system.
The MBR0530T1G device is designed for low voltage, high frequency rectification, or applications using surface mount freewheeling and polarity protection diodes. Its package also provides an easy-to-use alternative to the lead-free 34 package style.

• Guardring for Stress Protection
• Low Forward Voltage
• 125°C Operating Junction Temperature
• Epoxy Meets UL 94, V−0 @ 0.125 in
• Package Designed for Optimal Automated Board Assembly
• NRVB Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC−Q101Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant*

Rated voltage (直流)30.0 五
Rated current500 嘛
无卤状态无卤素
输出电流≤500 mA
Load current0.5 一个
PolarityStandard
Thermal resistance150℃/瓦 (RθJL)
Maximum forward surge current (Ifsm)5.5 一个
Forward voltage (最大限度)430 毫伏
Forward current (最大限度)500 嘛
工作温度 (最大限度)125 ℃
工作温度(敏)-65 ℃
包裹SOD-123
引脚2

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