Transistor ushered in another technological breakthrough

With the development of the semiconductor industry, products in all walks of life are constantly developing in the direction of intelligence. Products in the fields of automobiles, industrial machinery, and consumer electronics are becoming more and more intelligent, all of which are inseparable from the support of semiconductor devices. The transistor is one of the most important devices in semiconductor devices, and every technological breakthrough is accompanied by technological adjustments in various industries.
Recently, researchers have made breakthroughs in transistors, from finFET architecture technology to 3nm nanosheet transistor technology. This is a very large technological improvement, and it is expected that this technological improvement will also be practiced in other chip areas.
Compared to finFET technology, nanosheet transistors have increased channel width and can provide more drive current within the same circuit footprint. Using a gate-all-around design greatly improves channel control and minimizes short channel effects. On the surface, nanosheet transistors are similar to finFETs, but the nanosheet channel and substrate are aligned in parallel, while finFET transistors are aligned vertically, which is more suitable for device operation. Fabrication of nanosheet transistors begins with deposition of a Si/SiGe heterostructure, isolated from the substrate to prevent parasitic conduction.
Although SiGe layers are not part of the finished device, their germanium concentration is an important process variable. Complete removal of the SiGe material without damaging or etching the silicon requires an etch process with high SiGe:Si selectivity. Ideally, device designers want to minimize the spacing between nanosheets to reduce parasitic capacitance. Etching through alternating Si/SiGe layers is more complicated than etching monolithic silicon pillars due to the different etch properties of Si and SiGe.
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