NVMFS5C604NLAFT1G-ON Полупроводник
$11.00
- Описание
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Описание
The NVMFS5C604NLAFT1G device developed and designed by ON Semiconductor has excellent performance. Recognized by major electronic manufacturing engineers, it has always been one of the electronic components in short supply on the market. xt-shenzhen owns the original electronic devices of the world’s top semiconductor companies including ON Semiconductor. If you want to receive more information about electronic components, пожалуйста свяжитесь с нами! ! !
The NVMFS5C604NLAFT1G device manufactured by ON Semiconductor, a professional semiconductor manufacturer, is a medium and high voltage MOS tube. The device incorporates state-of-the-art manufacturing processes, resulting in significantly improved performance and safety compared to similar products. It is a MOS tube that can be used with confidence, which is why the NVMFS5C604NLAFT1G device has been in short supply.
• Small footprint (5×6 mm) for compact designs
• Low RDS(on) minimizes conduction losses
• Low QG and capacitance minimize driver losses
• NVMFS5C604NLWF − Wettable flank option enhances optical detection
• AEC-Q101 qualified and PPAP capable
• These devices are Pb-free and RoHS compliant with maximum ratings
Количество контактов | 5 |
Рассеиваемая мощность | 3.9W |
threshold voltage | 2В |
Drain-source voltage (Vds) | 60В |
Rise Time | 79.1 ns |
Input Capacitance (Ciss) | 8900pF @25V(Vds) |
fall time | 81.3 ns |
Working Temperature(Макс) | 175°C |
Рабочая температура (Мин) | -55°C |
Рассеиваемая мощность(Макс) | 3900 мВт |
pin count | 5 |
инкапсуляция | SO-FL |
Упаковка | Лента & Катушка (ТР) |
lead standard | Lead Free |