IPW65R080CFD-compre componentes eletrônicos originais da Infineon
$16.80
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Descrição
IPW65R080CFD is a MOS transistor with very good performance designed by Infineon using the super junction (SJ) principle. This MOS tube is a MOSFET that meets the AEC-Q101 automotive industry standard. Atualmente, the market has been in a state of short supply. If you want to buy or learn more electronic components designed and developed by the original Infineon company, xt-Shenzhen is your good choice! ! !
o IPW65R080CFD is a revolutionary high voltage power MOSFET technology designed according to the super junction (SJ) principle. The 650V CFD2 series combines leading SJ MOSFET experience with best-in-class innovation. The resulting device offers all the benefits of fast switching SJ MOSFETs, while also providing an extremely fast and robust body diode.Resonant switching applications become more reliable and efficient due to extremely low switching, commutation, and conduction losses and the highest robustness.
●Lighter and smarter ultrafast body diode very high commutation durability
●Extremely low FOM, Rdson Qq and EOS lead to extremely low losses
●Easy to use/drive
●Pb-free plating, halogen-free mold compound
●Complies with JEDEC (J-STD20 and JESD22) industrial grade application requirements
●AEC-Q101 automotive industry qualified MOSFET.
●Provides best-in-class performance for higher efficiency, power density and cost-effectiveness
Número de pinos | 3 |
Drain-source resistance | 0.072Ω |
polarity | N-Channel |
Poder dissipado | 391C |
threshold voltage | 4V |
Drain-Source Voltage (Vds) | 700V |
Continuous Drain Current (Ids) | 43.3UMA |
Tempo de subida | 18ns |
Input Capacitance (Ciss) | 5030pF @100V(Vds) |
tempo de outono | 6ns |
Temperatura de operação | -55℃ ~ 150 ℃ (TJ) |
pacote | PARA-247-3 |
Embalagem | Tubo |