IPW60R070C6-Original Infineon

IPW60R070C6-Original Infineon

IPW60R070C6-Original Infineon

$7.06

In stock

$7.06

Description

IPW60R070C6 is a MOS transistor designed and developed by Infineon. Designed using the technology-first Super Junction (SJ) principle, its performance far exceeds other similar products. Because of its powerful functions, the market has been in a state of low supply and demand.If you want to know or buy more electronic components in short supply, please contact xt-shenzhen to serve you! ! !

The IPW60R070C6 uses high voltage power MOSFET technology and is designed according to the Super Junction (SJ) principle. The 650V CFD2 series combines leading SJ MOSFET experience with best-in-class innovation. The resulting device offers fast switching, combining all the advantages of an SJ MOSFET while providing an extremely fast and robust body diode.Extremely low switching, commutation and conduction losses combined with the highest robustness make especially resonant switching applications more reliable and efficient.Especially suitable for the automotive field, it is an automotive-grade electronic component.

●Lighter and smarter ultrafast body diode Very high commutation durability
Extremely low FOM, Rdson Qq and EOS lead to extremely low losses
●Easy to use/drive
●Pb-free plating, halogen-free molding compound
●Compliant with JEDEC (J-STD20 and JESD22) industrial grade application requirements
●AEC-Q101 automotive industry qualified MOSFET.
●Provides best-in-class performance for higher efficiency, power density and cost-effectiveness

number of channels1
polarityN-Channel
Dissipated power391W (Tc)
threshold voltage3V
Drain-Source Voltage (Vds)600V
Continuous Drain Current (Ids)53A
Rise Time12ns
Input Capacitance (Ciss)3800pF @100V(Vds)
Rated power (Max)391W
fall time5ns
Operating temperature-55℃ ~ 150℃ (TJ)
Dissipated power (Max)391W (Tc)
Number of pins3
packageTO-247-3
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    SKU: 14200
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