IKW50N60H3-buy original Infineon electronic components
$2.53
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Description
The IKW50N60H3 designed and developed by Infineon is an igbt transistor dedicated to the automotive field and a high-performance component produced with TrenchStop™ technology. This device plays a very important role in the automotive field and is therefore a commonly used electronic component by car manufacturers. You can rest assured to buy all kinds of automotive-related electronic components from xt-shenzhen, a supplier with sufficient supply and sufficient stock! ! !
The IKW50N60H3 Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device known for its high efficiency and fast switching. IGBTs combine the simple gate drive characteristics of a MOSFET with the high current and low saturation voltage capabilities of a bipolar transistor by combining an isolated gate FET for the control input and a bipolar power transistor for the switch in a single device together. Includes devices with integrated high-speed, fast-recovery anti-parallel diodes.
• Very low VCEsat
• Low EMI
• Very soft, fast recovery anti-parallel diode
• 175°C maximum junction temperature
• Standards Compliant JEDEC Compliant Target Application
• Lead-free lead plating; RoHS compliant
• Complete product range and PSpice
• ups
• Welding converter
• High switching frequency converter GCEGCE
rated power | 333W |
Number of pins | 3 |
Dissipated power | 333W |
Breakdown Voltage (Collector-Emitter) | 600V |
reverse recovery time | 130ns |
Rated power (Max) | 333W |
Operating temperature | -40℃ ~ 175℃ |
Installation method | Through Hole |
package | TO-247-3 |
Packing | Tube |