IKW25N120T2-Original Infineon
$3.35
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Description
The IKW25N120T2 designed and produced by Infineon is a high-performance component. This device is specially used in the automotive field and is one of the electronic components commonly used by automotive manufacturers. As a supplier with sufficient supply and sufficient stock, xt-shenzhen is your trusted partner! ! !
The IKW25N120T2 is a three-terminal power semiconductor device developed using TRENCHSTOP™ IGBT technology, known for its high efficiency and fast switching. IGBTs combine isolated gate FETs for control inputs and bipolar power transistors for switching in a single device. And combines the best balance between turn-on and turn-off energy with excellent robustness and excellent EMI behavior.
IGBTs combine the simple gate drive characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors, combining isolated gate FETs for control inputs and bipolar power transistors for switching in one device.
● Devices with integrated high-speed, fast-recovery anti-parallel diodes.
● Collector-emitter voltage range 1100 to 1600V
● Very low VCEsat
● Low turn-off losses
● Short tail current
● Low EMI
● Maximum junction temperature 175°C
| rated power | 349 W |
| Number of pins | 3 |
| Forward Voltage | 1.65 V |
| Dissipated power | 349 W |
| Breakdown Voltage (Collector-Emitter) | 1200 V |
| reverse recovery time | 195 ns |
| Rated power (Max) | 349 W |
| Operating temperature | -40℃ ~ 175℃ (TJ) |
| Dissipated power (Max) | 349 W |
| Installation method | Through Hole |
| package | TO-247-3 |
| Packing | Tube |
