FGH60N60SMD -ON Semiconductor Component
$4.10
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Description
FGH60N60SMD is launched by ON Semiconductor, the world’s top IGBT transistor research and development company. The transistor is at the industry-leading level in both quality and performance. If you want to buy or learn more about ON Semiconductor’s high-end electronic components, please contact xt-shenzhen to serve you. xt-shenzhen is a company specializing in selling all kinds of original electronic components, you can buy with confidence! ! !
The FGH60N60SMD utilizes novel field stop IGBT technology to provide optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications. An IGBT transistor is a three-terminal power semiconductor device that combines the simple gate drive characteristics of a MOSFET with bipolarity by combining an isolated gate FET for the control input and a bipolar power transistor for the switch in a single device. The transistor’s high current and low saturation voltage capabilities combine.
• Maximum Junction Temperature: TJ = 175oC
• Positive temperature coefficient for easy parallel operation
• High current capability
• Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 60 A
• High input impedance
• Quick switch: EOFF = 7.5 uJ/A
• Enhanced parametric distribution
• RoHS compliant applications
| Number of pins | 3 |
| Dissipated power | 600 W |
| Breakdown Voltage (Collector-Emitter) | 600 V |
| reverse recovery time | 39 ns |
| Rated power (Max) | 600 W |
| Operating temperature | -55℃ ~ 175℃ (TJ) |
| Dissipated power (Max) | 600 W |
| Installation method | Through Hole |
| package | TO-247-3 |
| Packing | Tube |
