FGA6560WDF-ON Semiconductor Component
$2.58
- Description
- Inquiry
Description
FGA6560WDF Insulated Gate Bipolar Transistor (IGBT) designed and developed by ON Semiconductor. At present, the supply is in short supply in the market.You can rest assured to buy all kinds of electronic components in short supply from xt-shenzhen company. xt-shenzhen promises that all electronic components sold by our company are all original and genuine, high-quality products with guaranteed quality.
The FGA6560WDF is ON Semiconductor’s new family of third-generation field-stop IGBTs featuring novel field-stop IGBT technology to provide optimum performance for welder applications requiring low conduction and switching losses. These are essential for applications requiring low conduction and switching losses. This device has very good performance and is one of the important devices mainly promoted by ON Semiconductor. This device complies with all compliance standards, including RoHS.
• Power factor correction
• Welders and industrial applications
• Maximum Junction Temperature: TJ =175oC
• Positive temperature coefficient for easy parallel operation
• High current capability
• Low saturation voltage: VCE(sat) =1.8 V(Typ.) @ IC = 60 A
• 100% of components are ILM(1) tested
• High input impedance
• Quick switch
• RoHS Compliant
| Dissipated power | 306000 mW |
| Breakdown Voltage (Collector-Emitter) | 650V |
| reverse recovery time | 110ns |
| Rated power (Max) | 306W |
| Operating temperature | -55℃ ~ 175℃ |
| Dissipated power (Max) | 306000 mW |
| Installation method | Through Hole |
| Number of pins | 3 |
| package | TO-3-3 |
| Packing | Tube |
