NDT2955-ON 半導体
$2.30
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説明
As one of the most popular MOS tubes at present, NDT2955 device has been in short supply in the market. After years of accumulation, xt-shenzhen can provide most of the original ON Semiconductor devices including NDT2955 models to global customers. If you want to know or buy other brands or models of original electronic components, ご連絡ください! ! !
の NDT2955 field effect transistor is produced using Fairchild’s patented high cell density DMOS technology. This very high density process is designed to minimize on-state resistance, providing robust and reliable performance and fast switching. の NDT2955 device also provides excellent design reliability by reducing voltage peaks and overshoots to reduce junction capacitance and reverse recovery charge, keeping the system up and running longer without additional external components.
●A large portfolio of MOSFET devices is available, including high voltage (>250Ⅴ) and low voltage (<250Ⅴ) types.
●Advanced silicon technology provides smaller die size
● Enhancement Mode P-Channel MOSFET, Fairchild Semiconductor
●Produced using Fairchild Semiconductor’s high-voltage trench process
● Optimized for power management applications
●DC/DC converter
●Power Management
ピン数 | 4 |
Drain-source resistance | 0.3Ω |
消費電力 | 3W |
threshold voltage | 2.6Ⅴ |
input capacitance | 601 pF |
Drain-source voltage (Vds) | 60Ⅴ |
立ち上がり時間 | 20 ns |
Input Capacitance (Ciss) | 601pF @30V(Vds) |
定格出力(マックス) | 1.1W |
fall time | 12 ns |
Working Temperature(マックス) | 150°C |
作業温度 (分) | -55°C |
消費電力(マックス) | 3W |
設置方法 | 表面実装 |
カプセル化 | TO-261-4 |
梱包 | テープ & リール (TR) |
製造アプリケーション | 家電, 産業用, パワー管理, ポータブル機器 |