NDT2955-ON 半導体

NDT2955-ON 半導体

NDT2955-ON 半導体

$2.30

在庫あり

$2.30

説明

As one of the most popular MOS tubes at present, NDT2955 device has been in short supply in the market. After years of accumulation, xt-shenzhen can provide most of the original ON Semiconductor devices including NDT2955 models to global customers. If you want to know or buy other brands or models of original electronic components, ご連絡ください! ! !

NDT2955 field effect transistor is produced using Fairchild’s patented high cell density DMOS technology. This very high density process is designed to minimize on-state resistance, providing robust and reliable performance and fast switching. の NDT2955 device also provides excellent design reliability by reducing voltage peaks and overshoots to reduce junction capacitance and reverse recovery charge, keeping the system up and running longer without additional external components.

●A large portfolio of MOSFET devices is available, including high voltage (>250Ⅴ) and low voltage (<250Ⅴ) types.
●Advanced silicon technology provides smaller die size
● Enhancement Mode P-Channel MOSFET, Fairchild Semiconductor
●Produced using Fairchild Semiconductor’s high-voltage trench process
● Optimized for power management applications
●DC/DC converter
●Power Management

ピン数4
Drain-source resistance0.3Ω
消費電力3W
threshold voltage2.6Ⅴ
input capacitance601 pF
Drain-source voltage (Vds)60Ⅴ
立ち上がり時間20 ns
Input Capacitance (Ciss)601pF @30V(Vds)
定格出力(マックス)1.1W
fall time12 ns
Working Temperature(マックス)150°C
作業温度 (分)-55°C
消費電力(マックス)3W
設置方法表面実装
カプセル化TO-261-4
梱包テープ & リール (TR)
製造アプリケーション家電, 産業用, パワー管理, ポータブル機器

    SKU: 6000
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