IKW50N60H3-beli komponen elektronik Infineon asli
$2.53
- Keterangan
- Pertanyaan
Keterangan
The IKW50N60H3 designed and developed by Infineon is an igbt transistor dedicated to the automotive field and a high-performance component produced with TrenchStop™ technology. This device plays a very important role in the automotive field and is therefore a commonly used electronic component by car manufacturers. You can rest assured to buy all kinds of automotive-related electronic components from xt-shenzhen, a supplier with sufficient supply and sufficient stock! ! !
Itu IKW50N60H3 Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device known for its high efficiency and fast switching. IGBTs combine the simple gate drive characteristics of a MOSFET with the high current and low saturation voltage capabilities of a bipolar transistor by combining an isolated gate FET for the control input and a bipolar power transistor for the switch in a single device together. Includes devices with integrated high-speed, fast-recovery anti-parallel diodes.
• Very low VCEsat
• Low EMI
• Very soft, fast recovery anti-parallel diode
• 175°C maximum junction temperature
• Standards Compliant JEDEC Compliant Target Application
• Lead-free lead plating; RoHS compliant
• Complete product range and PSpice
• ups
• Welding converter
• High switching frequency converter GCEGCE
| nilai daya | 333W |
| Jumlah pin | 3 |
| Kekuatan yang hilang | 333W |
| Breakdown Voltage (Collector-Emitter) | 600V |
| reverse recovery time | 130ns |
| Nilai daya (Maks) | 333W |
| Suhu Operasional | -40℃ ~ 175℃ |
| Metode instalasi | Melalui Lubang |
| kemasan | KE-247-3 |
| Sedang mengemas | Tabung |
