Semiconductor NVMFS5C604NLAFT1G-ON
$11.00
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Descripción
The NVMFS5C604NLAFT1G device developed and designed by ON Semiconductor has excellent performance. Recognized by major electronic manufacturing engineers, it has always been one of the electronic components in short supply on the market. xt-shenzhen owns the original electronic devices of the world’s top semiconductor companies including ON Semiconductor. If you want to receive more information about electronic components, por favor contáctenos! ! !
los NVMFS5C604NLAFT1G device manufactured by ON Semiconductor, a professional semiconductor manufacturer, is a medium and high voltage MOS tube. The device incorporates state-of-the-art manufacturing processes, resulting in significantly improved performance and safety compared to similar products. It is a MOS tube that can be used with confidence, which is why the NVMFS5C604NLAFT1G device has been in short supply.
• Small footprint (5×6 milímetro) for compact designs
• Low RDS(on) minimizes conduction losses
• Low QG and capacitance minimize driver losses
• NVMFS5C604NLWF − Wettable flank option enhances optical detection
• AEC-Q101 qualified and PPAP capable
• These devices are Pb-free and RoHS compliant with maximum ratings
| Número de pines | 5 |
| Potencia disipada | 3.9W |
| voltaje umbral | 2V |
| Drain-source voltage (VDS) | 60V |
| Hora de levantarse | 79.1 ns |
| Capacitancia de entrada (ciss) | 8900pF @25V(VDS) |
| otoño | 81.3 ns |
| Temperatura de trabajo(máx.) | 175°C |
| Temperatura de trabajo (mínimo) | -55°C |
| Potencia disipada(máx.) | 3900 mW |
| recuento de pines | 5 |
| encapsulación | SO-FL |
| Embalaje | Cinta & Carrete (TR) |
| estándar de plomo | Sin plomo |
