Componente semiconductor FGL40N120ANDTU-ON
$9.81
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Descripción
FGL40N120ANDTU is designed and developed by ON Semiconductor. This model is a car-grade chip specially designed to handle automotive applications. Due to their wide application range and high quality requirements, this often results in incomplete production capacity. The market has always been in a state of short supply. If you want to buy or learn more about the shortage of electronic components, please contact xt-shenzhen for your answer! ! !
los FGL40N120ANDTU Insulated Gate Bipolar IGBT Transistor is a three-terminal power semiconductor device known for its high efficiency and fast switching. Los IGBT combinan las características de accionamiento de compuerta simple de un MOSFET con las capacidades de voltaje de saturación baja y corriente alta de un transistor bipolar mediante la combinación de un FET de compuerta aislado para la entrada de control y un transistor de potencia bipolar para el interruptor en un solo dispositivo..
• High-speed switching
• Low Saturation Voltage: VCE(sat) = 2.6 V @ IC = 40A
• High input impedance
• CO-PAK, IGBT with FRD: trr = 75ns (tipo)
• Applications for induction heating, UPS, AC and DC motor control and general purpose inverters
• The pulse width is limited by the maximum value.
Potencia disipada | 500000 mW |
Cortocircuito (Colector-Emisor) | 1200V |
tiempo de recuperación inversa | 112ns |
Potencia nominal (máx.) | 500W |
Temperatura de funcionamiento | -55℃ ~ 150 ℃ (T.J.) |
Embalaje | Tubo |
Potencia disipada (máx.) | 500000 mW |
Metodo de instalacion | A través del orificio |
Número de pines | 3 |
paquete | TO-264-3 |