NDT2955-ON Halbleiter
$2.30
- Beschreibung
- Anfrage
Beschreibung
As one of the most popular MOS tubes at present, NDT2955 device has been in short supply in the market. After years of accumulation, xt-shenzhen can provide most of the original ON Semiconductor devices including NDT2955 models to global customers. If you want to know or buy other brands or models of original electronic components, bitte kontaktieren Sie uns! ! !
Das NDT2955 field effect transistor is produced using Fairchild’s patented high cell density DMOS technology. This very high density process is designed to minimize on-state resistance, providing robust and reliable performance and fast switching. Das NDT2955 device also provides excellent design reliability by reducing voltage peaks and overshoots to reduce junction capacitance and reverse recovery charge, keeping the system up and running longer without additional external components.
●A large portfolio of MOSFET devices is available, including high voltage (>250v) and low voltage (<250v) types.
●Advanced silicon technology provides smaller die size
● Enhancement Mode P-Channel MOSFET, Fairchild Semiconductor
●Produced using Fairchild Semiconductor’s high-voltage trench process
● Optimized for power management applications
●DC/DC converter
●Power Management
| Anzahl der Stifte | 4 |
| Drain-Source-Widerstand | 0.3Oh |
| Verlustleistung | 3W |
| Grenzspannung | 2.6v |
| input capacitance | 601 pF |
| Drain-source voltage (Vds) | 60v |
| Aufstiegszeit | 20 ns |
| Eingangskapazität (Ciss) | 601pF @30V(Vds) |
| Nennleistung(max) | 1.1W |
| Abfallzeit | 12 ns |
| Arbeitstemperatur(max) | 150°C |
| Arbeitstemperatur (Mindest) | -55°C |
| Verlustleistung(max) | 3W |
| Installationsmethode | Oberflächenmontage |
| Verkapselung | TO-261-4 |
| Verpackung | Band & Spule (TR) |
| Fertigungsanwendung | Unterhaltungselektronik, Industriell, Energieverwaltung, Tragbare Geräte |
